MTB06N03H8 Просмотр технического описания (PDF) - Cystech Electonics Corp.
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MTB06N03H8 Datasheet PDF : 6 Pages
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CYStech Electronics Corp.
Spec. No. : C710H8
Issued Date : 2009.05.07
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TC=25℃
TC=100℃
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
30
V
±20
75
45
A
160 *1
53
140
mJ
40 *2
60
W
32
-55~+175
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N-CH
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3 °C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
VGS(th)
1.0
GFS *1
-
IGSS
-
IDSS
-
-
ID(ON) *1
75
-
RDS(ON) *1
-
Dynamic
Ciss
-
Coss
-
Crss
-
-
1.5
25
-
-
-
-
5.5
8.8
3292
501
355
-
3.0
-
±100
1
25
-
6.5
11
-
-
-
V
VGS=0, ID=250μA
V
VDS = VGS, ID=250μA
S
VDS =5V, ID=24A
nA
VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
A
VDS =10V, VGS =10V
mΩ VGS =10V, ID=30A
mΩ VGS =4.5V, ID=24A
pF
VGS=0V, VDS=15V, f=1MHz
MTB06N03H8
CYStek Product Specification
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