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MMG3002NT1 Просмотр технического описания (PDF) - Freescale Semiconductor

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MMG3002NT1 Datasheet PDF : 16 Pages
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50 OHM TYPICAL CHARACTERISTICS
42
39
36
33
30
f = 900 MHz
100 kHz Tone Spacing
27
5
5.1
5.2
5.3
5.4
VCC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
41
40
39
38
37
36
35
--40 --20
VCC = 5.2 Vdc,
f = 900 MHz
100 kHz Tone Spacing
8 Vdc Supply with 25 Ω Dropping Resistor
0
20
40
60
80 100
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
--30
105
--40
104
--50
--60
--70
--80
5
VCC = 5.2 Vdc
f = 900 MHz
100 kHz Tone Spacing
7
9
11 13
15 17 19 21
Pout, OUTPUT POWER (dBm)
Figure 10. Third Order Intermodulation Distortion
versus Output Power
103
102
120
125
130
135
140
145
150
TJ, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with VCC = 5.2 Vdc, ICC = 110 mA
Figure 11. MTTF versus Junction Temperature
8
--20
6
4
2
VCC = 5.2 Vdc
0
0 0.5
1
1.5
2
2.5 3
3.5 4
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
RF Device Data
Freescale Semiconductor, Inc.
--30
--40
--50
--60
--70
9
VCC = 5.2 Vdc,f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF)
11
13
15
17
19
Pout, OUTPUT POWER (dBm)
Figure 13. Single--Carrier W--CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3002NT1
5
 

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