MG100J1ZS40 Просмотр технического описания (PDF) - Toshiba
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MG100J1ZS40 Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Collector-emitter breakdown voltage
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Reverse current
Forward voltage
Reverse recovery time
Thermal resistance
Symbol
Test Condition
IGES
ICES
V(BR) CES
VGE (off)
VCE (sat)
Cies
tr
ton
tf
toff
IR
VF
trr
Rth (j-c)
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
IC = 10mA, VGE = 0
IC = 100mA , VCE = 5A
IC = 100A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
VR = 600V
IF = 100A, VGE = 0
IF = 100A, VGE = −10V,
di / dt = 100A / µs
Transistor
Diode
MG100J1ZS40
Min Typ. Max Unit
―
― ±500 nA
―
―
1.0 mA
600
―
―
V
3.0
―
6.0
V
―
2.7
3.5
V
― 8100 ―
pF
― 0.30 0.60
― 0.40 0.80
µs
― 0.18 0.35
― 0.60 1.00
―
―
1.0 mA
―
2.0 2.70
V
― 0.08 0.15 µs
―
― 0.31
°C / W
―
― 0.83
2
2001-08-16
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