K4E660412D Просмотр технического описания (PDF) - Samsung

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K4E660412D

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Samsung 

K4E660412D,K4E640412D

WRITE CYCLE ( OE CONTROLLED WRITE )

NOTE : DOUT = OPEN

VIH -

RAS

VIL -

VIH -

CAS

VIL -

VIH -

A

VIL -

VIH -

W

VIL -

VIH -

OE

VIL -

DQ0 ~ DQ3(7)

VIH -

VIL -

tRC

tRAS

tCRP

tRCD

tRAD

tASR tRAH

ROW

ADDRESS

tASC

tCSH

tRSH

tCAS

tRAL

tCAH

COLUMN

ADDRESS

tCWL

tRWL

tWP

tOED

tDS

tOEH

tDH

DATA-IN

CMOS DRAM

tRP

tCRP

Don′t care

Undefined

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