IS42S16400-7T Просмотр технического описания (PDF) - Integrated Circuit Solution Inc

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IS42S16400-7T

2(1)M Words x 8(16) Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Circuit Solution Inc 

IS42S8800/IS42S8800L

IS42S16400/IS42S16400L

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameters

Rating

Unit

V,,

V,,3

VI

VO

IO

PD

TOPT

TSTG

Supply Voltage (with respect to VSS)

–0.5 to +4.6

V

Supply Voltage for Output (with respect to VSSQ) –0.5 to +4.6

V

Input Voltage (with respect to VSS)

–0.5 to VDD+0.5

V

Output Voltage (with respect to VSSQ)

–1.0 to VDDQ+0.5

V

Short circuit output current

50

mA

Power Dissipation (TA = 25 °C)

1

W

Operating Temperature

0 to +70

°C

Storage Temperature

–65 to +150

°C

Notes:

1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent

damage. The device is not meant to be operated under conditions outside the limits described in the

operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended

periods may affect device reliability.

DC RECOMMENDED OPERATING CONDITIONS

(At TA = 0 to +70°C unless otherwise noted)

Symbol

Parameter

Min. Typ.

Max.

Unit

VDD

VDDQ

VSS

VSSQ

VIH

VIL

Supply Voltage

3.0

3.3

3.6

V

Supply Voltage for DQ

0

0

0

V

Ground

3.0

3.3

3.6

V

Ground for DQ

0

0

0

V

High Level Input Voltage (all Inputs) 2.0

—

VDD + 0.3

V

Low Level Input Voltage (all Inputs) -0.3

—

+0.8

V

CAPACITANCE CHARACTERISTICS

(At TA = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise note@)

Symbol

CIN

CCLK

CI/O

Parameter

Input Capacitance, address & control pin

Input Capacitance, CLK pin

Data Input/Output Capacitance

Min.

2.5

2.5

4.0

Max. Unit

3.8

pF

3.5

pF

6.5

pF

Integrated Circuit Solution Inc.

5

DR007-0A

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