IRF820ALPBF(2011) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRF820ALPBF
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRF820AS, SiHF820AS, IRF820AL, SiHF820AL

Vishay Siliconix

300

ID

Top 1.1 A

250

1.6 A

Bottom 2.5 A

200

150

100

50

0

25

50

75

100

125

150

91058_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Maximum Avalanche Energy vs. Drain Current

700

650

600

550

0.0

0.5

1.0

1.5

2.0

2.5

91058_12d

IAV, Avalanche Current (A)

Fig. 12d - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91058

S11-1049-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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