IRF820ALPBF(2011) Просмотр технического описания (PDF) - Vishay Semiconductors
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IRF820ALPBF Datasheet PDF : 11 Pages
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IRF820AS, SiHF820AS, IRF820AL, SiHF820AL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
VGS
Top 15 V
10 V
8.0 V
7.0 V
1
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
0.1
4.5 V
10-2
0.1
20 µs Pulse Width
TJ = 25 °C
1
10
102
91058_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
TJ = 150 °C
1
TJ = 25 °C
0.1
20 µs Pulse Width
VDS = 50 V
10-2
4.0
5.0
6.0
7.0
8.0
9.0
91058_03
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10
VGS
Top 15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
1
5.0 V
Bottom 4.5 V
4.5 V
0.1
1
20 µs Pulse Width
TJ = 150 °C
10
102
91058_02
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 2.5 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91058_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91058
S11-1049-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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