IDT6168LA45 Просмотр технического описания (PDF) - Integrated Device Technology
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IDT6168LA45 Datasheet PDF : 7 Pages
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IDT6168SA/LA
CMOS STATIC RAM 16K (4K x 4-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATA RETENTION CHARACTERISTICS (LA Version Only)
VLC = 0.2V, VHC = VCC – 0.2V
Symbol
Parameter
Test Condition
VDR
VCC for Data Retention
ICCDR
Data Retention Current
CS ≥ VHC
VIN ≥ VHC
or ≤ VLC
MIL.
COM’L.
tCDR(5)
Chip Deselect to Data
Retention Time
tR(5)
Operation Recovery Time
NOTES:
1. TA = +25°C.
2. at VCC = 2V
3. at VCC = 3V
4. tRC = Read Cycle Time.
5. This parameter is guaranteed by device characterization, but is not production tested.
Min.
2.0
—
—
—
—
0
tRC(2)
IDT6168LA
Typ.(1)
—
0.5(2)
1.0(3)
0.5(2)
1.0(3)
—
—
Max.
—
100(2)
150(3)
20(2)
30(3)
—
—
Unit
V
µA
µA
ns
ns
3090 tbl 10
LOW VCC DATA RETENTION WAVEFORM
VCC
4.5V
tCDR
CS
VIH
DATA
RETENTION
MODE
VDR ≥ 2V
VDR
4.5V
tR
VIH
3090 drw 03
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
DATAOUT
255Ω
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
3090 tbl 11
5V
480Ω
30pF*
DATAOUT
255Ω
5V
480Ω
5pF*
Figure 1. AC Test Load
3090 drw 04
*Includes scope and jig capacitances
3090 drw 05
Figure 2. AC Test Load
(for tCHZ, tCLZ, tWHZ and tOW)
5.3
4
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