IDT6168LA25(2001) Просмотр технического описания (PDF) - Integrated Device Technology
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IDT6168LA25 Datasheet PDF : 9 Pages
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IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit)
Military, Industrial, and Co mmercial Temperature Ranges
Data Retention Characteristics (LA Version Only)
VLC = 0.2V, VHC = VCC 0.2V
IDT6168LA
Symbol
Parameter
Test Condition
Min.
Typ.(1)
Max.
Unit
VDR
VCC for Data Retention
2.0
____
____
V
ICCDR
Data Retention Current
CS > VHC
VIN > VHC
or < VLC
MIL.
____
____
COM'L.
____
____
0.5(2)
1.0(3)
0.5(2)
1.0(3)
100(2)
µA
150(3)
20(2)
µA
30(3)
tCDR(5)
Chip Deselect to Data
Retention Time
0
____
____
ns
tR(5)
Operation Recovery Time
tRC(4)
____
____
ns
NOTES:
1. TA = +25°C.
2. at VCC = 2V
3. at VCC = 3V
4. tRC = Read Cycle Time.
5. This parameter is guaranteed by device characterization, but is not production tested.
3090 tbl 10
Low VCC Data Retention Waveform
DATA
RETENTION
MODE
VCC
4.5V
tCDR
VDR ≥ 2V
CS
VIH
VDR
4.5V
tR
VIH
,
3090 drw 03
AC Test Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
5V
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
3090 tbl 11
DATA OUT
255Ω
480Ω
30pF*
DATAOUT
255Ω
5V
480Ω
5pF*
3090 drw 04
Figure 1. AC Test Load
*Includes scope and jig capacitances
4
Figure 2. AC Test Load
(for tCHZ, tCLZ, tWHZ and tOW)
3090 drw 05
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