HM62W4100H Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HM62W4100H

4M High Speed SRAM (1-Mword × 4-bit)

Hitachi -> Renesas Electronics 

HM62W4100H Series

DC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0V)

Parameter

Symbol Min

Input leakage current

IILII

—

Output leakage current

IILOI

—

Operation power

12 ns cycle ICC

—

supply current

15 ns cycle ICC

—

Standby power supply 12 ns cycle ISB

—

current

15 ns cycle ISB

—

I SB1

—

Typ*1

—

—

—

Max

2

2

180

Unit

µA

µA

mA

—

160

—

60

mA

—

50

0.05 5

mA

—*2

0.05*2 1*2

Output voltage

VOL

—

—

0.4

V

VOH

2.4

—

—

V

Notes: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.

2. This characteristics is guaranteed only for L-version.

Test conditions

Vin = VSS to VCC

Vin = VSS to VCC

Min cycle

CS = VIL, lout = 0 mA

Other inputs = VIH/VIL

Min cycle, CS = VIH,

Other inputs = VIH/VIL

f = 0 MHz

VCC ≥ CS ≥ VCC - 0.2 V,

(1) 0 V ≤ Vin ≤ 0.2 V or

(2) VCC ≥ Vin ≥ VCC - 0.2 V

IOL = 8 mA

IOH = –4 mA

Capacitance (Ta = +25°C, f = 1.0 MHz)

Parameter

Symbol Min

Typ

Input capacitance*1

Cin

—

—

Input/output capacitance*1

CI/O

—

—

Note: 1. This parameter is sampled and not 100% tested.

Max

6

8

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

5

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