HAT2031T(D) Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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HAT2031T(D) Datasheet PDF : 10 Pages
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HAT2031T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
± 12
V
Drain current
ID
3.5
A
Drain peak current
I Note1
D(pulse)
28
A
Body-drain diode reverse drain current IDR
3.5
A
Channel dissipation
Pch Note2
1
W
Channel dissipation
Pch NoteÇR
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive Operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
20
± 12
—
—
0.5
—
—
4.5
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body–drain diode forward voltage VDF
—
Body–drain diode reverse
recovery time
t rr
—
Note: 4. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
± 10 µA
—
1
µA
—
1.5 V
0.054 0.070 Ω
0.074 0.098 Ω
7
—
S
300 —
pF
185 —
pF
90
—
pF
13
—
ns
75
—
ns
60
—
ns
75
—
ns
0.85 1.11 V
35
—
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ± 100 µA, VDS = 0
VGS = ± 10 V, VDS = 0
VDS = 12 V, VGS = 0
VDS = 10 V, I D = 1m A
ID = 2 A, VGS = 4 V Note4
ID = 2 A, VGS = 2.5 V Note4
ID = 2 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VGS = 4 V, ID = 2 A
VDD ≅ 10 V
IF = 3.5 A, VGS = 0 Note4
IF = 3.5 A, VGS = 0
diF/ dt = 20 A/µs
2
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