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HAL525 Просмотр технического описания (PDF) - Unspecified

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производитель
HAL525
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HAL525 Datasheet PDF : 21 Pages
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HAL525, HAL535
Hall Effect Sensor Family
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL525 and HAL535 are Hall switches produced
in CMOS technology. The sensors include a tempera-
ture-compensated Hall plate with active offset com-
pensation, a comparator, and an open-drain output
transistor. The comparator compares the actual mag-
netic flux through the Hall plate (Hall voltage) with the
fixed reference values (switching points). Accordingly,
the output transistor is switched on or off.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages
from 3.8 V to 24 V in the ambient temperature range
from 40 °C up to 150 °C.
The HAL525 and HAL535 are available in the
SMD-package SOT-89B and in the leaded version
TO-92UA.
1.2. Family Overview
Both sensors have a latching behavior with typically
the same sensitivity. The difference between HAL 525
and HAL535 is the temperature coefficient of the mag-
netic switching points.
Type Switching
Behavior
525 latching
535 latching
Typical
Temperature
Coefficient
2000 ppm/K
1000 ppm/K
see
Page
14
16
Latching Sensors:
Both sensors have a latching behavior and requires a
magnetic north and south pole for correct functioning.
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The out-
put does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
1.1. Features
– switching offset compensation at typically 115 kHz
– operates from 3.8 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at VDD-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply voltage
range
– the decrease of magnetic flux density caused by ris-
ing temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for window lifter, ignition timing, and
revolution counting in extreme automotive and
industrial environments
– EMC corresponding to DIN 40839
Micronas
3

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