DCR504ST Просмотр технического описания (PDF) - Dynex Semiconductor

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DCR504ST

Phase Control Thyristor

Dynex Semiconductor 

DCR504ST

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) on-state current

TSM

I2t

I2t for fusing

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

Conditions

10ms half sine; T = 125oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 125oC

VR = 0

Max. Units

5.5

kA

150x 103 A2s

6.8

kA

231 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 4.5kN

with mounting compound

Double side

Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

- 0.063 oC/W

-

0.11 oC/W

- 0.147 oC/W

-

0.02 oC/W

-

0.04 oC/W

-

135

oC

-

125

oC

–55 125

oC

4.0 5.0

kN

3/8

www.dynexsemi.com

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