DCR1006SF Просмотр технического описания (PDF) - Dynex Semiconductor

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DCR1006SF

Phase Control Thyristor

Dynex Semiconductor 

DCR1006SF

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) on-state current

TSM

I2t

I2t for fusing

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

Conditions

10ms half sine; T = 125oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 125oC

VR = 0

Max. Units

16.4

kA

1.35 x 106 A2s

20.5

kA

2.1 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 19.5kN

with mounting compound

Double side

Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

- 0.022 oC/W

- 0.038 oC/W

- 0.052 oC/W

- 0.004 oC/W

- 0.008 oC/W

-

135

oC

-

125

oC

–55 125

oC

18.0 22.0 kN

3/8

www.dynexsemi.com

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