D44H11FP Просмотр технического описания (PDF) - Cystech Electonics Corp.

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D44H11FP

Low Vcesat NPN Epitaxial Planar Transistor

Cystech Electonics Corp. 

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor

D44H11FP

Spec. No. : C606FP

Issued Date : 2005.03.29

Revised Date :

Page No. : 1/4

Features

• Low VCE(sat)

• High BVCEO

• Excellent current gain characteristics

• Pb-free package

Symbol

D44H11FP

Outline

TO-220FP

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation @ TA=25℃

Power Dissipation @ TC=25℃

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Junction Temperature

Storage Temperature

Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.

D44H11FP

Symbol

VCBO

VCEO

VEBO

IC

ICP

PD

PD

RθJA

RθJC

Tj

Tstg

BCE

Limits

80

80

6

10

20 (Note 1)

2

50

62.5

2.5

150

-55~+150

Unit

V

V

V

A

W

°C/W

°C/W

°C

°C

CYStek Product Specification

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