CY7C1041BV33L-25VC Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1041BV33L-25VC Datasheet PDF : 11 Pages
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CY7C1041BV33
Electrical Characteristics Over the Operating Range (continued)
Parameter
VOH
VOL
VIH
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
VIL
Input LOW Voltage[1]
IIX
Input Load Current
IOZ
Output Leakage
Current
ICC
VCC Operating
Supply Current
ISB1
Automatic CE
Power-Down Current
—TTL Inputs
ISB2
Automatic CE
Power-Down Current
—CMOS Inputs
Test Conditions
-17
-20
-25
Min. Max. Min. Max. Min. Max. Unit
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
2.4
2.4
2.4
V
0.4
0.4
0.4 V
2.2 VCC + 2.2 VCC + 2.2 VCC + V
0.5
0.5
0.5
–0.5 0.8 –0.5 0.8 –0.5 0.8 V
GND < VI < VCC
GND < VOUT < VCC,
Output Disabled
–1 +1 –1 +1 –1 +1 µA
–1 +1 –1 +1 –1 +1 µA
VCC = Max.,
f = fMAX = 1/tRC
Comm’l
Ind’l
160
150
180
170
130 mA
150
Max. VCC, CE > VIH
VIN > VIH or
VIN < VIL, f = fMAX
40
40
Max. VCC,
Com’l/Ind’l
8
8
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
Com’l L
0.5
0.5
or VIN < 0.3V, f=0
40 mA
8 mA
0.5 mA
Capacitance[3]
Parameter
Description
Test Conditions
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = 3.3V
COUT
I/O Capacitance
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
Max.
8
8
Unit
pF
pF
AC Test Loads and Waveforms
3.3V
R1 317Ω
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
(a)
THÉVENIN EQUIVALENT
OUTPUT
167Ω
R2
(b)
351Ω
3.3V
1.73V
GND
Rise time: 1 V/ns
ALL INPUT PULSES
90%
10%
90%
10%
Fall time:
1 V/ns
Document #: 38-05168 Rev. **
Page 3 of 11
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