BYT79-500 Просмотр технического описания (PDF) - Philips Electronics
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BYT79-500 Datasheet PDF : 5 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast
1000 trr / ns
100
IF=20 A
1A
10
Tj = 25 C
Tj = 100 C
1
1
10
100
dIF/dt (A/us)
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
Irrm / A
10
IF= 20 A
1
IF=1A
0.1
0.01
1
Fig.6.
Tj = 25 C
Tj = 100 C
10
100
-dIF/dt (A/us)
Maximum Irrm at Tj = 25˚C and 100˚C.
IF / A
50
Tj = 25 C
Tj = 150 C
40
BYT79
30
typ
max
20
10
0
0
0.5
1
1.5
2
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Product specification
BYT79 series
Qs / nC
1000
100
10
IF = 20 A
2A
1
1.0
10
100
-dIF/dt (A/us)
Fig.8. Maximum Qs at Tj = 25˚C
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV79E
Fig.9. Transient thermal impedance Zth = f(tp)
September 1998
3
Rev 1.300
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