BT145 Просмотр технического описания (PDF) - Philips Electronics

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BT145

Thyristors

Philips Electronics 

Philips Semiconductors

Thyristors

Product specification

BT145 series

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

Rth j-mb

Rth j-a

Thermal resistance

junction to mounting base

Thermal resistance

in free air

junction to ambient

MIN. TYP. MAX. UNIT

-

-

1.0 K/W

-

60

- K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

IGT

Gate trigger current

IL

Latching current

IH

Holding current

VT

On-state voltage

VGT

Gate trigger voltage

ID, IR

Off-state leakage current

CONDITIONS

VD = 12 V; IT = 0.1 A

VD = 12 V; IGT = 0.1 A

VD = 12 V; IGT = 0.1 A

IT = 30 A

VD = 12 V; IT = 0.1 A

VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C

VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C

MIN.

-

-

-

-

-

0.25

-

TYP.

5

25

20

1.1

0.6

0.4

0.2

MAX.

35

80

60

1.5

1.0

-

1.0

UNIT

mA

mA

mA

V

V

V

mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

dVD/dt

tgt

tq

Critical rate of rise of

off-state voltage

Gate controlled turn-on

time

Circuit commutated

turn-off time

VDM = 67% VDRM(max); Tj = 125 ˚C;

exponential waveform; gate open circuit

ITM = 40 A; VD = VDRM(max); IG = 0.1 A;

dIG/dt = 5 A/µs

VD = 67% VDRM(max); Tj = 125 ˚C;

ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;

dVD/dt = 50 V/µs

MIN.

200

-

-

TYP. MAX. UNIT

500

- V/µs

2

-

µs

70

-

µs

October 1997

2

Rev 1.200

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