BS62UV4000STI-10 Просмотр технического описания (PDF) - Brilliance Semiconductor
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BS62UV4000STI-10 Datasheet PDF : 11 Pages
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BSI
BS62UV4000
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
NAME
VIL
VIH
IIL
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
Input Leakage Current
TEST CONDITIONS
Vcc = Max, VIN = 0V to Vcc
Vcc = 2.0 V
Vcc = 3.0 V
Vcc = 2.0 V
Vcc = 3.0 V
MIN. TYP. (1) MAX.
-0.5
--
0.6
0.8
1.4
2.0
--
Vcc+0.2
--
--
1
UNITS
V
V
uA
IOL
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 1mA
Vcc = 2.0 V
Vcc = 3.0 V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -0.5mA
Vcc = 2.0 V
1.6
--
--
V
Vcc = 3.0 V 2.4
ICC
Operating Power Supply CE = VIL, IDQ = 0mA, F = Fmax(3) Vcc = 2.0 V
--
--
15
mA
Current
Vcc = 3.0 V
20
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc = 2.0 V
--
--
Vcc = 3.0 V
0.6
mA
1
ICCSB1
Standby Current-CMOS CE Њ Vcc-0.2V,
Vcc = 2.0 V
0.2
1
--
uA
VIN Њ Vcc - 0.2V or VIN Љ 0.2V Vcc = 3.0 V
0.25
1.5
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
CE Њ Vcc - 0.2V
VDR
Vcc for Data Retention
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
--
0.1
1
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Vcc
CE
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE ≥ Vcc - 0.2V
Vcc
tR
VIH
R0201-BS62UV4000
3
Revision 2.4
April 2002
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