BS616UV4010BI-10 Просмотр технического описания (PDF) - Brilliance Semiconductor
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BS616UV4010BI-10 Datasheet PDF : 10 Pages
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BSI
BS616UV4010
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
SYMBOL
VTERM
TBIAS
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under Bias
RATING
-0.5 to
Vcc+0.5
-40 to +125
UNITS
V
OC
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0 O C to +70 O C
-40 O C to +85 O C
Vcc
1.8V ~ 3.6V
1.8V ~ 3.6V
TSTG
Storage Temperature
-60 to +150
OC
PT
IOUT
Power Dissipation
DC Output Current
1.0
W
20
mA
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
VIN=0V
VI/O=0V
MAX.
6
8
1. This parameter is guaranteed and not tested.
UNIT
pF
pF
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
NAME
PARAMETER
VIL
Guaranteed Input Low
Voltage (2)
VIH
Guaranteed Input High
Voltage (2)
IIL
Input Leakage Current
TEST CONDITIONS
Vcc = Max, VIN = 0V to Vcc
Vcc=2.0V
Vcc=3.0V
Vcc=2.0V
Vcc=3.0V
MIN. TYP.(1) MAX.
-0.5 --
1.4
2.0
--
--
--
0.6
0.8
Vcc+0.2
1
UNITS
V
V
uA
IOL
Output Leakage Current
Vcc = Max, CE = V IH , or OE,= V IH
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, I OL = 1mA
Vcc=2.0V
--
--
0.4
V
Vcc=3.0V
VOH
ICC
Output High Voltage Vcc = Min, IOH = -0.5mA
Vcc=2.0V 1.6
Vcc=3.0V 2.4
--
Operating Power Supply
Current
CE=VIL ,I = DQ 0mA, F = Fmax(3)
Vcc=2.0V
Vcc=3.0V
--
--
--
V
15
20
mA
ICCSB
Standby Current-TTL CE = V ,IH I = DQ 0mA
Vcc=2.0V
--
--
Vcc=3.0V
0.5
mA
1
ICCSB1
Standby Current-CMOS
CE Њ Vcc-0.2V,
VIN Њ Vcc - 0.2V or VIN Љ0.2V
Vcc=2.0V
Vcc=3.0V
--
0.2
0.25
1
1.5
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
VDR
Vcc for Data Retention
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
CE Њ Vcc - 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
--
0.1
1
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
R0201-BS616UV4010
3
Revision 2.4
April 2002
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