BS616LV8011AI-70 Просмотр технического описания (PDF) - Brilliance Semiconductor
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BS616LV8011AI-70 Datasheet PDF : 9 Pages
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BSI
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
TEST CONDITIONS
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
Vcc=3V
Vcc=3V
IOL
Output Leakage Current
Vcc = Max, CE1 = VIH , or CE2 = ViL, or
OE = VIH, VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=3V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=3V
ICC
Operating Power Supply Vcc=max, CE1=VIL and CE2= VIH,
Current
IDQ = 0mA, F = Fmax(3)
Vcc=3V
BS616LV8011
MIN.
-0.5
2.0
--
--
--
2.4
TYP. (1) MAX. UNITS
--
0.8
V
--
Vcc+0.2
V
--
1
uA
--
1
uA
--
0.4
V
--
--
V
--
--
40
mA
ICCSB
Standby Current-TTL
Vcc= max, CE1 = VIH or CE2 = VIL,
IDQ = 0mA
Vcc=3V
--
--
1
mA
Vcc= max,CE1ЊVcc-0.2V, or CE2
ICCSB1
Standby Current-CMOS Љ0.2V, VINЊVcc-0.2V or VINЉ0.2V Vcc=3V
--
1
16
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
VDR
Vcc for Data Retention
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V or
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
1.5
--
--
V
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
tR
Operation Recovery Time
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
CE1 Њ Vcc - 0.2V or CE2 Љ 0.2V
VIN Њ Vcc - 0.2V or VIN Љ 0.2V
See Retention Waveform
--
0.8
12
uA
0
--
--
ns
TRC (2)
--
--
ns
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
Vcc
t CDR
Data Retention Mode
VDR Њ 1.5V
Vcc
tR
CE1
VIH
CE1 Њ Vcc - 0.2V
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Vcc
Vcc
t CDR
Data Retention Mode
VDR Њ 1.5V
CE2
VIL
CE2 Љ 0.2V
Vcc
tR
VIL
R0201-BS616LV8011
3
Revision 2.3
April 2002
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