AT29C1024 Просмотр технического описания (PDF) - Atmel Corporation
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AT29C1024 Datasheet PDF : 16 Pages
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Features
• Fast Read Access Time - 70 ns
• 5-Volt Only Reprogramming
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 words/sector)
– Internal Address and Data Latches for 128 Words
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Sector Program Cycle Time - 10 ms
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 60 mA Active Current
– 200 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29C1024 is a 5-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 70 ns with power dissipation of just 330 mW. When the device
is deselected, the CMOS standby current is less than 200 µA. The device endurance
is such that any sector can typically be written to in excess of 10,000 times.
Pin Configurations
(continued)
Pin Name
A0 - A15
CE
OE
WE
I/O0 - I/O15
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PLCC Top View
I/O12 7
I/O11 8
I/O10 9
I/O9 10
I/O8 11
GND 12
NC 13
I/O7 14
I/O6 15
I/O5 16
I/O4 17
39 A13
38 A12
37 A11
36 A10
35 A9
34 GND
33 NC
32 A8
31 A7
30 A6
29 A5
NC 1
A0 2
A1 3
A2 4
A3 5
A4 6
A5 7
NC 8
A6 9
A7 10
A8 11
VSS 12
A9 13
A10 14
A11 15
NC 16
A12 17
A13 18
A14 19
A15 20
NC 21
WE 22
VCC 23
NC 24
TSOP Top View
Type 1
48 NC
47 OE
46 O0
45 O1
44 O2
43 O3
42 O4
41 NC
40 O5
39 O6
38 O7
37 VSS
36 O8
35 O9
34 O10
33 NC
32 O11
31 O12
30 O13
29 O14
28 O15
27 CE
26 NC
25 NC
1-Megabit
(64K x 16)
5-volt Only
Flash Memory
AT29C1024
Rev. 0571A–10/98
1
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