AO4600 Просмотр технического описания (PDF) - Unspecified

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AO4600

Complementary Enhancement Mode Field Effect Transistor

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AO4600

Complementary Enhancement Mode

Field Effect Transistor

General Description

The AO4600 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The

complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green

Product ordering option. AO4600 and AO4600L are electrically identical.

Features

n-channel

p-channel

VDS (V) = 30V

-30V

ID = 6.9A (VGS = 10V) -5A (VGS = -10V)

RDS(ON)

< 27mΩ

< 49mΩ (VGS =- 10V)

< 32mΩ

< 64mΩ (VGS =- 4.5V)

< 50mΩ

< 120mΩ (VGS = -2.5V)

D2

D1

S2 1 8 D2

G2 2 7 D2

S1 3 6 D1

G1 4 5 D1

SOIC-8

G2

S2

n-channel

G1

S1

p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

±12

Continuous Drain TA=25°C

6.9

Current A

TA=70°C

ID

5.8

Pulsed Drain CurrentB

IDM

40

Power Dissipation

TA=25°C

TA=70°C

PD

2

1.44

Junction and Storage Temperature Range TJ, TSTG

-55 to 150

Max p-channel

-30

±12

-5

-4.2

-30

2

1.44

-55 to 150

Units

V

V

A

W

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Typ

Maximum Junction-to-AmbientA

Maximum Junction-to-AmbientA

t ≤ 10s

Steady-State

RθJA

48

74

Maximum Junction-to-LeadC

Steady-State

RθJL

35

Max

62.5

110

40

Units

°C/W

°C/W

°C/W

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