AO4914 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

AO4914

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

Alpha and Omega Semiconductor 

AO4914, AO4914L

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

TJ=55°C

0.003 1

µA

5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1

1.8

3

V

ID(ON)

On state drain current

VGS=10V, VDS=5V

30

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=8.5A

TJ=125°C

15.5 18

mΩ

22.3 27

VGS=4.5V, ID=6A

23

28 mΩ

gFS

Forward Transconductance

VDS=5V, ID=8.5A

23

S

VSD

Diode Forward Voltage

IS=1A,VGS=0V

0.75 1

V

IS

Maximum Body-Diode Continuous Current

3

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1040 1250 pF

180

pF

110

pF

0.7 0.85 Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

19.2 23

nC

Qg(4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=15V, ID=8.5A

9.36 11.2 nC

2.6

nC

Qgd

Gate Drain Charge

4.2

nC

tD(on)

Turn-On DelayTime

5.2 7.5

ns

tr

Turn-On Rise Time

VGS=10V, VDS=15V, RL=1.8Ω,

4.4 6.5

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

17.3 26

ns

tf

Turn-Off Fall Time

3.3

5

ns

trr

Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs

16.7 21

ns

Qrr

Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs

6.7

10

nC

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in

any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve

provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

Share Link: