30JL2C41 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
Список матч
30JL2C41 Datasheet PDF : 4 Pages
| |||
30JL2C41
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
30JL2C41
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage : VRRM = 600 V
z Average Output Rectified Current : IO = 30 A
z Ultra Fast Reverse-Recovery Time : trr = 50 ns (Max)
z Low Switching Losses and Output Noise
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
600
V
Average Output Rectified Current
IO
30
A
Peak One Cycle Surge Forward
Current (Sine Wave)
IFSM
150 (50Hz)
A
165 (60Hz)
Junction Temperature
Storage Temperature Range
Screw Torque
Tj
−40~150
°C
JEDEC
―
Tstg
−40~150
°C
JEITA
―
TOSHIBA
12−16D1A
―
0.8
N·m
Weight: 4.85g
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
Repetitive Peak Reverse Current
Reverse Recovery time
Forward Recovery time
Thermal Resistance
VFM
IRRM
trr
tfr
Rth (j−c)
IFM = 15A
VRRM = 600V
IF = 2A, di / dt = −50A / μs
IF = 1A
Total DC, Junction to Case
VFM, IRRM, trr, tfr : A value applied to one cell.
POLARITY
MIN MAX UNIT
―
2.0
V
―
50
μA
―
50
ns
― 150 ns
―
1.0 °C / W
1
2006-11-08
Share Link: 