2SK975 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK975 Datasheet PDF : 8 Pages
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1000
500
200
100
50
Body to Drain Diode Reverse
Recovery Time
di/dt = 50 A/µs, Ta = 25°C
VGS = 0
Pulse Test
20
10
0.05 0.1 0.2 0.5 1.0 2
5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
80
VDD = 50 V
16
25 V
10 V
60
12
VDS
40
VDD = 50 V
VGS
8
20
4
25 V
ID = 1.5 A
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
2SK975
1000
300
100
30
10
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
VGS = 0
f = 1 MHz
Crss
3
1
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
td (off)
50
tf
20
VGS = 10 V
VDD
=•
•
30
V
PW = 2 µs, duty < 1 %
10
tr
5
td (on)
2
1
0.05 0.1 0.2 0.5 1.0 2
5
Drain Current ID (A)
5
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