K1825 Просмотр технического описания (PDF) - Toshiba
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K1825 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1825
High Speed Switching Applications
Analog Switch Applications
• 4 V gate drive
• Low threshold voltage: Vth = 0.8~2.5 V
• High speed
• Enhancement-mode
• Small package
Equivalent Circuit
2SK1825
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
JEDEC
JEITA
TOSHIBA
―
―
2-4E1E
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
VDS
VGSS
ID
PD
Tch
Tstg
50
V
10
V
50
mA
300
mW
150
°C
−55~150
°C
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
1
2007-11-01
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