D2352 Просмотр технического описания (PDF) - Toshiba
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D2352 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2352
Power Amplifier Applications
2SD2352
Unit: mm
• High DC current gain: hFE = 800 to 3200
• Low collector saturation voltage: VCE (sat) = 0.3 V (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
DC
Collector current
IC
2
A
Pulse
ICP
4
Base current
IB
0.4
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2
W
25
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21
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