2SC5000 Просмотр технического описания (PDF) - Toshiba
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2SC5000 Datasheet PDF : 3 Pages
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2SC5000
IC – VCE
10
80
70
60
8
50
40
6
30
4
20
2
IB = 10 mA
Common emitter
Tc = 25°C
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
1000
500
300
100
50
30
hFE – IC
Tc = 100°C
−25
25
10
5
3 Common emitter
VCE = 1 V
1
0.01
0.1
1
10
30
Collector current IC (A)
VBE (sat) – IC
10
5 Common emitter
3 IC/IB = 20
1
0.5
0.3
−25 25 Tc = 100°C
0.1
0.05
0.03
0.01
0.01
0.1
1
10
30
Collector current IC (A)
IC – VBE
20
Common emitter
VCE = 1 V
16
12
8
100
Tc = −25°C
4
25
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
10
5 Common emitter
3 IC/IB = 20
1
0.5
0.3
Tc = 100°C
0.1
25
0.05
−25
0.03
0.01
0.01
0.1
1
10
30
Collector current IC (A)
Safe Operating Area
30
IC max (pulsed)*
IC max
(continuous)
10
*
10 ms*
5
DC operation
3
Tc = 25°C
1 ms*
100 µs*
100 ms*
1
0.5
0.3 *: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
35
10
VCEO max
30 50 100
Collector-emitter voltage VCE (V)
2
2004-07-26
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