C5000 Просмотр технического описания (PDF) - Toshiba
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C5000 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
2SC5000
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
80
V
50
V
7
V
10
A
1
A
25
W
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 70 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 1 V, IC = 1 A
IC = 5 A, IB = 0.25 A
IC = 5 A, IB = 0.25 A
VCE = 1 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Min Typ. Max Unit
―
―
1
µA
―
―
1
µA
50
―
―
V
120 ― 400
― 0.19 0.4
V
― 0.96 1.4
―
90
― MHz
―
90
―
pF
Marking
C5000
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26
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