2SA1468B Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SA1468B

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1468

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–180

V

–180

V

–5

V

–100

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –180 —

voltage

Collector to emitter breakdown V(BR)CEO –180 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

DC current transfer ratio

hFE*1

100 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Gain bandwidth product

fT

—

200

Collector output capacitance Cob

—

3.5

Notes: 1. The 2SA1468 is grouped by hFE as follows.

2. Pulse test

Grade

B

C

Mark

INB

INC

hFE

100 to 200 160 to 320

Max Unit Test conditions

—

V

IC = –10 µA, IE = 0

—

V

IC = –0.5 mA, RBE = ∞

—

V

IE = –10 µA, IC = 0

320

–0.5 V

VCE = –12 V, IC = –2 mA*2

IC = –30 mA, IB = –3 mA*2

–1.0

—

—

V

MHz

pF

VCE = –12 V, IC = –2 mA

VCE = –12 V, IC = –10 mA

VCB = –10 V, IE = 0, f = 1 MHz

2

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