K1341 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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K1341

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1341

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS 900

Gate to source breakdown

voltage

V(BR)GSS ±30

Gate to source leak current

I GSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off) 2.0

Static drain to source on state RDS(on) —

resistance

Forward transfer admittance |yfs|

2.3

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ Max

—

—

—

—

—

±10

—

250

—

3.0

2.0

3.0

3.7

—

980 —

400 —

195 —

20

—

80

—

125 —

100 —

0.9

—

1000 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 720 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 3 A, VGS = 10 V *1

ID = 3 A, VDS = 20 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 3 A, VGS = 10 V,

RL = 10 Ω

IF = 6 A, VGS = 0

IF = 6 A, VGS = 0,

diF/dt = 100 A/µs

3

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