SMBR860 Просмотр технического описания (PDF) - Micro Electro Magnetical Tech

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SMBR860

SCHOTTKY DIE SPECIFICATION

Micro Electro Magnetical Tech 

Micro-Electro-Magnetical Tech Co.

SCHOTTKY DIE SPECIFICATION

General Description: 60 V 8 A ( Super Low Ir)

TYPE: SMBR860

Single Anode

ELECTRICAL CHARACTERISTICS

DC Blocking Voltage: Ir=1mA(for wafer form)

Ir=0.5mA (for dice form)

Average Rectified Forward Current

Maximum Instantaneous Forward Voltage

@ 8 Amperes, Ta=25°C

@ 20 Amperes, 25°C

Maximum Instantaneous Reverse Voltage

VR= 60 Volt, Ta=25°C

SYM

VRRM

IFAV

VF MAX

IR MAX

Spec. Limit

60

8

0.68

0.95

0.07

Maximum Junction Capacitance @ 0V, 1MHZ

MAXIMUM RATINGS

Nonrepetitive Peak Surge Current

Operating Junction Temperature

Storage Temperatures

Cj MAX

IFSM

Tj

TSTG

150

-65 to +125

-65 to +125

Specification apply to die only. Actual performance may degrade when assembled.

MEMT does not guarantee device performance after assembly.

Data sheet information is subjected to change without notice.

DICE OUTLINE DRAWING

Die Sort UNIT

63

Volt

Amp

0.67 Volt

0.94

0.06 mA

pF

Amp

°C

°C

DIM

ITEM

um2 Mil2

A Die Size

2220 87.40

A

C

B Top Metal Pad Size 2120 83.5

C Passivation Seal

2140 84.3

D Thickness (Min)

254

10

Thickness (Max)

305

12

B

Top-side Metal

SiO2 Passivation

PS:

(1)Cutting street width is around 80um(3.14mil).

(2)Both of top-side and back-side metals are Ti/Ni/Ag.

D

P+ Guard Ring

Back-side Metal

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