DE375-102N12A Просмотр технического описания (PDF) - Directed Energy, Inc. An IXYS Company
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DE375-102N12A Datasheet PDF : 3 Pages
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Directed Energy, Inc.
An IXYS Company
DE375-102N12A
RF Power MOSFET
Symbol Test Conditions
RG
Ciss
Coss
Crss
Td(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
RthJHS
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
0.3
Ω
2700
pF
305
pF
93
pF
5
ns
3
ns
5
ns
8
ns
93
nC
16
nC
42
nC
0.23
K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions
min.
typ. max.
IS
ISM
VSD
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
12 A
72 A
1.5 V
Trr
QRM
IRM
IF = IS, -di/dt = 100A/µs,
VR = 100V
200
ns
0.6
µC
7
A
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions” technical note on DEI’s web site at
www.directedenergy.com/apptech.htm
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,850,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
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