DE150-102N02A Просмотр технического описания (PDF) - Directed Energy, Inc. An IXYS Company

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DE150-102N02A

RF Power MOSFET

Directed Energy, Inc. An IXYS Company 

Directed Energy, Inc.

An IXYS Company

DE150-102N02A

RF Power MOSFET

Symbol Test Conditions

RG

Ciss

Coss

Crss

Td(on)

Ton

Td(off)

Toff

Qg(on)

Qgs

Qgd

RthJHS

VGS = 0 V, VDS = 0.8 VDSS(max),

f = 1 MHz

VGS = 15 V, VDS = 0.8 VDSS

ID = 0.5 IDM

RG = 0.2 Ω (External)

VGS = 10 V, VDS = 0.5 VDSS

ID = 0.5 ID25

Characteristic Values

(TJ = 25°C unless otherwise specified)

min.

typ. max.

5Ω

500

pF

20

pF

3

pF

4

ns

4

ns

4

ns

4

ns

23

nC

4.5

nC

14

nC

1.5

K/W

Source-Drain Diode

Characteristic Values

(TJ = 25°C unless otherwise specified)

Symbol Test Conditions

min.

typ. max.

IS

ISM

VSD

VGS = 0 V

Repetitive; pulse width limited by TJM

IF = IS, VGS = 0 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2%

1.5 A

9A

1.8 V

Trr

710

ns

Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.

DEI MOSFETS are covered by one or more of the following U.S. patents:

4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508

5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715

5,381,025 5,640,045

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