JANTXV2N6849 Просмотр технического описания (PDF) - International Rectifier

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JANTXV2N6849

HEXFET TRANSISTORS

International Rectifier 

IRFF9130

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1133aa&&bb

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

OPERATION IN THIS AREA LIMITED

BY R DS(on)

10

100µs

1ms

1

10ms

0.1

0.01

Tc = 25°C

Tj = 150°C

Single Pulse

1

10

DC

100

1000

-VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

www.irf.com

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