ULN2004AP Просмотр технического описания (PDF) - Toshiba

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ULN2004AP

TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba 

SCHEMATICS (EACH DRIVER)

ULN2003AP / AFW

ULN2003,04AP/AFW

ULN2004AP / AFW

Note: The input and output parasitic diodes cannot be used as clamp diodes.

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

Output Sustaining Voltage

Output Current

Input Voltage

Clamp Diode Reverse Voltage

Clamp Diode Forward Current

Power Dissipation

AP

AFW

Operating Temperature

Storage Temperature

VCE (SUS)

IOUT

VIN

VR

IF

PD

Topr

Tstg

−0.5~50

500

−0.5~30

50

500

1.47

0.54 / 0.625

(Note)

−40~85

−55~150

Note: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)

UNIT

V

mA / ch

V

V

mA

W

°C

°C

2

2001-07-05

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