TLP280(2002) Просмотр технического описания (PDF) - Toshiba

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TLP280
(Rev.:2002)

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

TLP280,TLP280−4

Maximum Ratings (Ta = 25°C)

Characteristic

Forward current

Forward current derating

Pulse forward current

Junction temperature

Collector-emitter voltage

Emitter-collector voltage

Collector current

Collector power dissipation

(1 circuit)

Collector power dissipation

derating (Ta ≥ 25°C) (1 circuit)

Junction temperature

Storage temperature range

Operating temperature range

Lead soldering temperature

Total package power dissipation

(1 circuit)

Total package power dissipation

derating (Ta ≥ 25°C) (1 circuit)

Isolation voltage

(Note)

Symbol

IF(RMS)

∆IF /°C

IFP

Tj

VCEO

VECO

IC

PC

∆PC /°C

Tj

Tstg

Topr

Tsol

PT

∆PT /°C

BVS

Rating

TLP280

TLP280-4

±50

-0.7 (Ta ≥ 53°C) -0.5 (Ta ≥ 25°C)

±1 (100µs pulse, 100pps)

125

80

7

50

Unit

mA

mA /°C

A

°C

V

V

mA

150

100

mW

-1.5

-1.0

125

-55~125

-55~100

260 (10s)

200

170

-2.0

-1.7

2500 (AC, 1min., R.H.≤ 60%)

mW /°C

°C

°C

°C

°C

mW

mW /°C

Vrms

(Note): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted

together.

3

2002-09-25

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