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RN2305 Просмотр технического описания (PDF) - Toshiba
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Компоненты Описание
Список матч
RN2305
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Toshiba
RN2305 Datasheet PDF : 7 Pages
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5
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7
Electrical Characteristics
(Ta = 25
°
C)
Characteristic
Collector cut-off current RN2301~2306
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301~2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301~2304
RN2305, 2306
RN2301~2306
RN2301~2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301~2304
RN2305
RN2306
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
Test
Circuit
Test Condition
―
V
CB
=
−
50V, I
E
= 0
―
V
CE
=
−
50V, I
B
= 0
―
―
V
EB
=
−
10V, I
C
= 0
―
―
―
V
EB
=
−
5V, I
C
= 0
―
―
―
―
V
CE
=
−
5V
―
I
C
=
−
10mA
―
―
―
I
C
=
−
5mA
I
B
=
−
0.25mA
―
―
―
V
CE
=
−
0.2V
―
I
C
=
−
5mA
―
―
―
V
CE
=
−
5V,
―
I
C
=
−
0.1mA
―
V
CE
=
−
10V,
I
C
=
−
5mA
―
V
CB
=
−
10V, I
E
= 0
f = 1MHz
―
―
―
―
―
―
―
―
―
―
―
RN2301~RN2306
Min Typ. Max Unit
―
― −
100
nA
―
― −
500
−
0.82
― −
1.52
−
0.38
― −
0.71
−
0.17
―
−
0.082
―
−
0.33
mA
−
0.15
−
0.078
― −
0.145
−
0.074
― −
0.138
30
―
―
50
―
―
70
―
―
―
80
―
―
80
―
―
80
―
―
―
−
0.1
−
0.3
V
−
1.1
― −
2.0
−
1.2
― −
2.4
−
1.3
― −
3.0
V
−
1.5
― −
5.0
−
0.6
― −
1.1
−
0.7
― −
1.3
−
1.0
― −
1.5
V
−
0.5
― −
0.8
―
200
―
MHz
―
3
6
pF
3.29 4.7 6.11
7
10
13
15.4 22 28.6
k
Ω
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9
1.0
1.1
0.0421 0.0468 0.0515
―
0.09 0.1 0.11
2
2001-06-07
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