M2LZ47 Просмотр технического описания (PDF) - Toshiba
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M2LZ47 Datasheet PDF : 5 Pages
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SM2LZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current
I
Gate Trigger Voltage
II
III
I
Gate Trigger Current
II
III
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
Critical Rate of Rise of Off−State Voltage
at Communication
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (j−a)
dv / dt
(dv / dt) c
VDRM = 800V
VD = 12V,
RL = 20Ω
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
VD = 12V,
RL = 20Ω
T2 (+) , Gate (+)
T2 (+) , Gate (−)
T2 (−) , Gate (−)
ITM = 3A
VD = 800V, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Ambient, AC
VDRM = 800V, Tj = 125°C
Exponential Rise
VDRM = 400V, Tj = 125°C
(di / dt) c = − 0.5A / ms
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
10
―
―
10
mA
―
―
10
―
―
2.0
V
0.2
―
―
V
―
―
10
mA
―
―
58 °C / W
―
500
― V / µs
5
―
― V / µs
MARKING
NUMBER
SYMBOL
*1
Toshiba Product Mark
*2
TYPE
SM2LZ47
MARK
M2LZ47
Example
*3
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10
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