SM2LZ47 Просмотр технического описания (PDF) - Toshiba

Номер в каталоге

Компоненты Описание

Список матч

SM2LZ47

BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

Toshiba 

SM2LZ47

TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE

SM2LZ47

AC POWER CONTROL APPLICATIONS

Unit: mm

l Repetitive Peak Off−State Voltage : VDRM = 800V

l R.M.S. On−State Current

: IT (RMS) = 2A

l High Commutation (dv / dt)

: (dv / dt) c = 5V / µs (Min.)

l Isolation Voltage

: VISOL = 1500V AC

MAXIMUM RATINGS

CHARACTERISTIC

SYMBOL

RATING

UNIT

Repetitive Peak Off−State Voltage

R.M.S. On−State Current

(Full Sine Waveform)

Peak One Cycle Surge On−State

Current (Non-Repetitive)

I2t Limit Value

Critical Rate of Rise of On−State

Current

(Note)

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Voltage

Peak Gate Current

Junction Temperature

Storage Temperature Range

Isolation Voltage (AC, t = 1min.)

VDRM

IT (RMS)

ITSM

I2t

di / dt

PGM

PG (AV)

VFGM

IGM

Tj

Tstg

VISOL

800

2

8 (50Hz)

8.8 (60Hz)

0.32

50

3

0.3

10

1.6

−40~125

−40~125

1500

V

A

A

A2s

A / µs

W

W

V

A

°C

°C

V

Note: di / dt test condition

VDRM = 400V, ITM ≤ 3A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0

JEDEC

JEITA

TOSHIBA

Weight: 1.7g

―

―

13−10H1A

1

2001-07-10

Share Link: