CR02AM-8A Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CR02AM-8A Datasheet PDF : 5 Pages
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ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
120
360°
RESISTIVE,
100
INDUCTIVE
LOADS
80
NATURAL
60
CONVECTION
40
20 θ = 30° 60° 90° 120° 180°
0
0
0.1
0.2
0.3
0.4
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
140
θθ
120
360°
100
RESISTIVE LOADS
NATURAL
80
CONVECTION
60
40
20
θ = 30° 60° 120°
90° 180°
0
0
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
RESISTIVE,
140
INDUCTIVE
LOADS
θ
120
NATURAL
360°
CONVECTION
100
80
θ = 30°
60°
60
90°
120°
40
180°
270°
20
DC
0
0
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
0.8
0.7
180°
120°
0.6
90°
0.5
60°
0.4
θ = 30°
0.3
0.2
0.1
0
0
θθ
360°
RESISTIVE LOADS
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
0.8
DC
0.7
270°
180°
0.6
120°
0.5
90°
60°
0.4
θ = 30°
0.3
θ
0.2
360°
0.1
0
0
RESISTIVE,
INDUCTIVE
LOADS
0.1 0.2 0.3 0.4 0.5
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
RGK = 1kΩ
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
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