TLP421 Просмотр технического описания (PDF) - Toshiba

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TLP421

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

Toshiba 

Individual Electrical Characteristics (Ta = 25°C)

TLP421

Characteristic

Forward voltage

Reverse current

Capacitance

Collector−emitter

breakdown voltage

Emitter−collector

breakdown voltage

Collector dark current

Capacitance

(collector to emitter)

Symbol

Test Condition

VF

IF = 10 mA

IR

VR = 5 V

CT

V = 0, f = 1 MHz

V(BR) CEO IC = 0.5 mA

V(BR) ECO IE = 0.1 mA

ID(ICEO)

VCE = 24 V (ambient light

below 1000 ℓx)

VCE = 24 V (ambient light

Ta = 85°C below 1000 ℓx)

CCE

V = 0, f = 1 MHz

Min Typ. Max Unit

1.0 1.2 1.3

V

―

―

10

μA

―

30

―

pF

80

―

―

V

7

―

―

V

―

0.01 0.1

(0.1) (10)

μA

―

0.6

(1)

50

(50)

μA

―

10

―

pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Current transfer ratio

Saturated CTR

Collector−emitter saturation

voltage

Symbol

Test Condition

MIn Typ. Max Unit

IC / IF

IF = 5 mA, VCE = 5 V

50

Rank GB 100

―

―

600

600

%

IC / IF (sat)

IF = 1 mA, VCE = 0.4 V

Rank GB

―

30

60

―

―

―

%

IC = 2.4 mA, IF = 8 mA

―

―

0.4

VCE (sat) IC = 0.2 mA, IF = 1 mA

―

0.2

―

V

Rank GB ―

―

0.4

Isolation Characteristics (Ta = 25°C)

Characteristic

Capacitance

(input to output)

Isolation resistance

Isolation voltage

Symbol

Test Condition

CS

VS = 0, f = 1 MHz

RS

VS = 500 V

AC, 1 minute

BVS

AC, 1 second, in oil

DC, 1 minute, in oil

Min Typ. Max Unit

―

0.8

―

1×1012 1014

―

5000 ―

―

― 10000 ―

― 10000 ―

pF

Ω

Vrms

Vdc

4

2007-10-01

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