D600K Просмотр технического описания (PDF) - Unspecified
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D600K Datasheet PDF : 1 Pages
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风光欣技术资料
■■APPLICATION: Low Frequency Power Amplifier Applications.
D600k
—NPN silicon —
■■MAXIMUM RATINGS（Ta＝25℃）
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO 120 V
Collector-emitter voltage
VCEO 120 V
Emitter-base voltage
VEBO 5
V
Collector current
IC
1
A
Power Dissipation(Ta=25℃)
PC
1
W
Power Dissipation(Tc=25℃)
PC
8
W
Junction Temperature
TJ
150 ℃
Storage Temperature Range
Tstg -55~150 ℃
1
TO-126
1. Emitter 2.Collector 3.Base
■■ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETER
SYMBOL MIN.
hFE1
60
Common Emitter DC Current Gain
hFE2
20
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Base Breakdown Voltage BVCBO
Collector-Emitter Breakdown Voltage BVCEO
Emitter-Base Breakdown Voltage BVEBO
Collector-Emitter Saturation Voltage VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Gain bandwidth product
fT
Output Capacitance
Cob
Fall Time
tf
120
120
5
50
Turn-off Time
toff
Storage Time
tstg
TYP. MAX. UNIT
TEST CONDITION
320
VCE= 5V，IC= 50mA
VCE= 5V，IC= 500mA
1
μA VCB= 50V，IE=0
1
μA VEB= 4V，IC=0
V IC= 0.01mA，IE=0
V IC= 1mA，IB=0
V IE= 0.01mA，IC=0
0.15 0.4 V IC= 500mA，IB= 50mA
0.85 1.2 V IC= 500mA，IB= 50mA
130
MHz IC= 50mA，VCE= 10V
20
pF VCB= 10V, IE=0, f = 1MHz
100
ns
500
700
ns
ns
VCE= 12V,PW=20μs
IC=10IB1=-10IB2= 500 mA
■■hFE Classification
Classification
hFE1
D
60~120
E
100~200
F
160~320
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