BGF125 Просмотр технического описания (PDF) - Infineon Technologies
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BGF125 Datasheet PDF : 7 Pages
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BGF125
SIM Card Interface Filter and ESD Protection
BGF125
Table 2 Electrical Characteristics1)
Parameter
Resistors R1, R3
Resistor R2
Leakage current of ESD protection diodes
Breakdown voltage of ESD diodes2)
Line capacitance
Capacitance of all lines to GND
1) at TA = 25 °C
2) after snap-back
Symbol
R1,3
R2
IL
V(BR)
CT
Min.
80
37.6
–
–
–
8
Values
Unit
Typ. Max.
100 120 Ω
47
56.4 Ω
1
100 nA
2
200 nA
18.5 –
V
-12.5
10
12
pF
Note /
Test Condition
–
–
V=3V
V=5V
I(BR) = 1 mA
I(BR) = -1 mA
V=0V
0
-5
-10
-15
-20
-25
-30
-35
-40
1
BGF125 insertion loss
A2-A3
10
100
M Hz
Figure 2 Insertion Loss, ZS = ZL = 50 Ω
B1-B3
1000
10000
Data Sheet
5
V2.0, 2009-04-01
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