2SK2009(2007) Просмотр технического описания (PDF) - Toshiba

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2SK2009
(Rev.:2007)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Toshiba 

2SK2009

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain-source breakdown voltage

Drain cut-off current

Gate threshold voltage

Forward transfer admittance

Drain-source ON resistance

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time

Turn-on time

Turn-off time

Symbol

Test Condition

Min Typ. Max Unit

IGSS

VGS = ±10 V, VDS = 0

⎯

⎯ ±0.1 μA

V (BR) DSS ID = 1 mA, VGS = 0

30

⎯

⎯

V

IDSS

VDS = 30 V, VGS = 0

⎯

⎯

10

μA

Vth

VDS = 3 V, ID = 0.1 mA

0.5

⎯

1.5

V

⎪Yfs⎪

VDS = 3 V, ID = 50 mA

100 ⎯

⎯

mS

RDS (ON) ID = 50 mA, VGS = 2.5 V

⎯

1.2

2

Ω

Ciss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

70

⎯

pF

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

23

⎯

pF

Coss

VDS = 3 V, VGS = 0, f = 1 MHz

⎯

58

⎯

pF

ton

VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.06 ⎯

μs

toff

VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ⎯ 0.12 ⎯

Switching Time Test Circuit

2

2007-11-01

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