ALJ13003 Просмотр технического описания (PDF) - Unspecified
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ALJ13003 Datasheet PDF : 1 Pages
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深圳市龙晶微电子有限公司
TO-126 Plastic-Encapsulate Transistors
ALJ13003
TRANSISTOR(NPN)
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
MAXI
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storag Temperature
Value
600
400
9
1.5
50
150
-55～150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specjfied):
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
600
V
Collector-emittre breakdown’voltage V(BR)CEO IC=1mA, IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO IC=100uA, IC=0
9
V
Collector cut-off current
ICBO
VCB=600V, IE=0
0.1
㎂
Emitter cut-off current
DC current gain
IEBO
VEB=9V，IC=0
HFE
Vce=5V，Ic=200mA
15
0.1
㎂
30
Collector-emitter saturation voltage VCE(sat) IC=1.0A,IB=0.25A
0.9
V
Base-emitter saturation voltage
VBE(sat) IC=1.0A,IB=0.25A
1.2
V
Storage Time
ts
2.0
6.0 us
Rising Time
tr
UI9600 IC=0.25A
1
us
Fall Time
tf
1
us
Transition Frequency
fT
VCE=10V,IC=0.1A,f=1MHZ
5
MHZ
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