HVU359 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HVU359

Variable Capacitance Diode for VCXO

Hitachi -> Renesas Electronics 

HVU359

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Junction temperature

Storage temperature

Symbol

VR

Tj

Tstg

Value

Unit

15

V

125

°C

-55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Reverse current

Capacitance

Capacitance ratio

Series resistance

ESD-Capability*1

Symbol Min Typ Max

I R1

— — 10

I R2

— — 100

C1

24.8 — 29.8

C4

6.0 — 8.3

n

3.0 — —

rs

— — 1.5

—

80 — —

Notes 1. Failure criterion ; IR ≥ 20nA at VR =10 V

Unit

nA

pF

—

Ω

V

Test Condition

VR = 10V

VR = 10V, Ta = 60 °C

VR = 1V, f = 1 MHz

VR = 4V, f = 1 MHz

C1/ C4

VR = 4V, f = 100 MHz

C=200pF , Both forward and reverse direction

1 pulse.

2

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