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FDH700

ULTRA FAST DIODE

Fairchild Semiconductor 

FD700

Ultra Fast Diode Diode

DISCRETE POWER AND SIGNAL

TECHNOLOGIES

Absolute Maximum Ratings (note 1) TA = 25OC unless otherwise noted

Parameter

Value

Units

Storage Temperature

-65 to +200

Maximum Junction Temperature

-65 to +175

Total Power Dissipation at 25OC

250

Derate above 25OC

1.67

Working Inverse Voltage

20

DC Forward Current

150

Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

OC

OC

mW

mW/OC

V

mA

DO-7

PACKAGE

Electrical Characteristics TA = 25OC unless otherwise noted

SYM

BV

IR

CHARACTERISTICS

Breakdown Voltage

Reverse Leakage

VF Forward Voltage

MIN MAX UNITS

TEST CONDITIONS

30

50

50

420 500

520 610

640 740

760 880

810 950

0.89 1.10

V

IR = 5.0 uA

nA

VR = 20 V

uA

VR = 20 V TA = 150OC

mV IF = 10 uA

mV IF = 100 uA

mV IF = 1.0 mA

mV IF = 10 mA

mV IF = 20 mA

V

IF = 50 mA

TRR Reverse Recovery Time

CT Diode Capacitance

700 ps

1.0

pF

IF= IR = 10 mA IRR = 1.0 mA

RLoop = 100 Ohm

VR = 0 V, f = 1.0 MHz

© 1997 Fairchild Semiconductor Corporation

Rev. A June 1998

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