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RF2424 Просмотр технического описания (PDF) - RF Micro Devices

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RF2424
RFMD
RF Micro Devices RFMD
RF2424 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RF2424
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
5.5
+6.0
-40 to +85
-40 to +150
VDC
dBm
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Unit
Min.
Typ.
Max.
Condition
Carrier Input
Frequency Range
Power Level
Input impedance
5
Modulation Input
Frequency Range
Reference Voltage (VREF)
Maximum Modulation (I&Q)
Gain Asymmetry
Quadrature Phase Error
Input DC Resistance
Input Bias Current
RF Output
Output Power
Output Impedance
Broadband Noise Floor
Sideband Suppression
Carrier Suppression
IM3 Suppression
Power Down
Turn On/Off Time
PD Input Resistance
Power Down “ON”
Power Down “OFF”
Power Supply
Voltage
Current
Power Down
700
-6
DC
+5.0
25
25
25
10
1.0
2.7
43 + j1.8
1.6
VREF ± 0.3
0.2
1
40
40
+7.5
50
-140
35
30
30
VCC
1.2
45
53
1000
+6
100
100
5.5
55
10
MHz
dBm
T=25 °C, VCC=3V
At 900MHz
MHz
V
V
dB
°
k
µA
dBm
dBm/Hz
dB
dB
dB
VCC=3V, LO power=-3dBm, LO
freq=900MHz, I/Q drive level=0.2VP, SSB
DSB output (+9dBm total power)
ns
k
V
V
V
mA
VCC = 3 V
mA
VCC =5 V
µA
5-44
Rev A6 010817

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